Samsung’s HBM4 Modules Reportedly Achieve 90% Logic Yield, Signaling Imminent Mass Production

The race for next-generation HBM4 (High Bandwidth Memory) is intensifying, and Samsung Electronics appears to have taken a major step forward. According to reports, the Korean tech giant’s HBM4 logic die yield has reached an impressive 90%, indicating that mass production is now within reach and that delays in the production roadmap are unlikely.

HBM4 is one of the most critical technologies in modern computing, serving as the backbone of AI acceleration and high-performance computing (HPC). With companies like Samsung, SK hynix, and Micron all competing to secure dominance in this sector, achieving high yield rates is a key milestone toward scaling up production and meeting unprecedented global demand for AI memory solutions.

At the Semiconductor Exhibition (SEDEX) 2025 in Seoul, Samsung publicly showcased its HBM4 technology for the first time, signaling its readiness to reclaim leadership in the advanced DRAM market after several years of underperformance. The company’s exhibit highlighted HBM4’s enhanced data rates, energy efficiency, and manufacturing maturity.

A DigiTimes report indicates that Samsung has fine-tuned its HBM4 fabrication process to achieve a 90% logic yield, one of the highest in the industry for such a complex 3D-stacked memory architecture. This success positions Samsung alongside SK hynix, the current market leader in HBM production, and reduces the likelihood of production setbacks that previously plagued its HBM3E rollout.

Samsung’s mass production phase for HBM4 is now expected to begin soon, with internal testing already underway. The company is also implementing a multi-pronged strategy to secure early adoption by major partners like NVIDIA, which heavily relies on HBM technology for its next wave of AI accelerators.

Key focus areas in Samsung’s HBM4 plan include:

• Competitive pricing to attract hyperscale and AI partners.

• Expanded production capacity through optimized fabrication nodes.

• Faster pin speeds of around 11 Gbps, surpassing SK hynix and Micron’s reported specifications.

Although Samsung has not yet received NVIDIA’s official approval for HBM4 integration, the company remains confident that its performance advantages and production readiness will make it a strong contender once NVIDIA finalizes qualification testing.

Alongside Samsung, SK hynix also showcased its own HBM4 modules at SEDEX 2025, developed in collaboration with TSMC. The increasing competition between these manufacturers is expected to reshape the DRAM and AI memory markets, especially as demand from data centers, AI training infrastructure, and next-gen GPUs continues to skyrocket.

With HBM4 expected to offer significantly higher bandwidth, improved efficiency, and denser 3D stacking, its arrival marks the next leap forward in memory innovation. Analysts anticipate that the combined efforts of Samsung, SK hynix, and Micron will lead to a record-breaking year for AI memory production volumes in 2026.

Samsung’s rapid progress not only signals a strong comeback in the high-end DRAM market but also reflects its determination to remain at the forefront of AI and HPC hardware innovation.

Do you think Samsung’s HBM4 can challenge SK hynix’s leadership in AI memory supply next year? Share your insights below.