Micron Says It Has Outperformed The Competition With Its 11 Gbps HBM4 Memory, Will Partner With TSMC For HBM4E DRAM
During its Q4 and FY2025 earnings call, Micron Technology announced strong financial performance and revealed key developments in its DRAM and NAND Flash segments. For the quarter, the company reported revenue of $11.32 billion, up from $9.30 billion in the previous quarter, while full-year revenue increased from $25.11 billion to $37.38 billion.
Micron emphasized that it is pushing performance leadership with its next-generation memory solutions, starting with HBM4. The company confirmed that its HBM4 12-Hi DRAM remains on track and that it has shipped the first customer samples of its fastest HBM4 product yet, offering over 11 Gbps pin speeds and 2.8 TB/s of bandwidth. Micron stated that these products will outperform all competition in terms of both performance and efficiency.
“We have recently shipped customer samples of our HBM4 with industry-leading bandwidth exceeding 2.8 TB/s and pin speeds over 11 Gbps. We believe Micron Technology’s HBM4 outperforms all competing HBM4 products, delivering industry-leading performance as well as best-in-class power efficiency,” said Sanjay Mehrotra, Micron President & CEO.
Micron attributes this to its proven 1-gamma DRAM, innovative CMOS base die design, advanced packaging technologies, and its ability to deliver high bandwidth with superior power efficiency. The company also confirmed that its HBM market share is on track to grow in line with its overall DRAM share by Q3 2025.
Looking ahead, Micron also discussed HBM4E, which is expected to arrive in 2027. Unlike HBM4, where Micron handles the CMOS base die entirely in-house, the company will partner with TSMC for the manufacturing of the base logic die for HBM4E. This includes both standard and customized products. Micron also noted that customization of the base logic die will allow closer collaboration with customers and yield higher gross margins.
“For HBM4E, Micron Technology will offer standard products as well as the option for customization of the base logic die. We are partnering with TSMC for manufacturing the HBM4E base logic die for both standard and customized products. Customization requires close collaboration with customers, and we expect HBM4E with customized base logic dies to deliver higher gross margins than standard HBM4E,” Mehrotra explained.
Micron further shared updates on its GDDR7 memory, originally introduced at 32 Gbps pin speeds, now expected to exceed 40 Gbps in future iterations. This represents a 25% performance uplift and will power future AI and client systems. Currently, NVIDIA is the sole GPU maker leveraging Micron’s GDDR7, which provides over 1.5 TB/s of bandwidth and a 30% performance improvement in gaming workloads across resolutions.
In addition, Micron highlighted its pioneering role in LPDRAM adoption for servers, noting that it has become the sole supplier of LPDRAM in data centers since NVIDIA integrated it into its GB product family.
The company also announced rapid progress with its 1γ DRAM node, achieving mature yields 50% faster than the prior generation, and confirmed that its G9 NAND production ramp for TLC and QLC NAND flash is progressing well. Micron remains the first to market with PCIe Gen6 SSDs for data centers, positioning itself strongly for next-gen storage solutions.
With industry-leading HBM4 now sampling and HBM4E on the horizon with TSMC collaboration, Micron appears determined to consolidate its leadership across multiple memory segments in the years to come.
What do you think about Micron’s claims that its HBM4 outperforms all competitors? Will TSMC’s involvement with HBM4E further cement Micron’s edge in the high-performance memory market?
